Published on : Dec 06, 2019
GaN is gallium nitride which is a semiconductor with enhanced features such as performance, power management, efficiency and control functions. GaN is grown on different type of substrates including sapphire, silicon and silicon carbide.
Silicon substrates with large diameter are employed to make low-cost GaN substrate to attain the best cost economics. Various positive attributes including high thermal breakdown, great thermal conductivity, high switching speed and less resistance make GaN devices very popular and propel the growth of global GaN nitride market. Growth in application of GaN devices with high-frequency and high-temperature are projected to positively influence the growth trajectory of global GaN substrate market during eth forecast period.
The global GaN substrate market is anticipated to grow at ?10% CAGR during the forecast period.
An intelligence report titled, “GaN Substrate Market - Global Industry Analysis, Size, Share, Growth, Trends, and Forecast 2019 - 2027” is the source of all the stated insights. This report is the latest addition to Market Research Hub’s ever growing repository.
Asia Pacific leads with highest market share
Asia Pacific held a major share of the global GaN market in the year 2018. The region is expected to continue its dominance in terms of market share during the forecast period 2019-2027 owing to the extensive use of GaN devices in different end-use industries. China witnessed great momentum in R&D activities to find new technologies. Presence of major stake holders make China a significant region in the global market.
North America is known to be the second-largest market in the global market as GaN substrates are increasingly adopted in different applications that include white-light LEDs and electric vehicles. Automotive sector uses GaN substrates in several applications including high-intensity vehicle and LiDAR. Europe is anticipated to generate lucrative opportunities in the forecast period owing to the fast growth of automotive sector in the regions, Western Europe and Central Europe.
Major stake holders profiled in global GaN substrate market include Mitsubishi Chemical Holdings, SCIOCS, PAM XIAMEN, Soitech, and Toshiba Corporation.
Global GaN substrate market: Report Synopsis
Quantitative and qualitative assessment exhort intelligence and overarching report on the Global GaN substrate market. Further, the report thoroughly delineates various aspects of the market that will potentially have considerable influence on the development of the Global GaN substrate market. As such, those aspects incorporate drivers, trends, restraints, and opportunities. Furthermore, the report elucidates segregation of the market that provides an exhaustive analysis on GaN substrate.
An insightful and deep-dive assessment of the competitive assessment of the Global GaN substrate market pins hope on Porters’ Five Force Analysis. Accordingly, the Porters’ Five Force Analysis offers a pressing analysis on the potential strategies of the preeminent players in the Global GaN substrate market. In addition, the business strategies counts on company overview, product portfolio, SWOT analysis, key differentiation and recent development.
Global GaN substrate market: Research Methodology
Primary sources and secondary sources propel intelligence report on Global GaN substrate market that provide deep dive analysis on the market. As such, the report provides reliable and unbiased projections, and assessments which have palpable impact on the market size and historical data. Besides, the report also counts on primary sources which hinges upon in-depth and intelligent analysis from well-grounded and reliable experts, telephonic interview, and a thorough assessment from surveys and seasoned analyst.
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